CE# should be decoded and used as the primary de-
vice-selecting function, while OE# be made a common
connection to all devices in the array and connected to
the READ line from the system control bus. This as-
sures that all deselected memory devices are in their
low-power standby mode and that the output pins are
only active when data is desired from a particular mem-
ory device.
ing and falling edges of Chip Enable. The magnitude of
these transient current peaks is dependent on the out-
put capacitance loading of the device. At a minimum, a
0.1 µF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
VCC and VSS to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM ar-
rays, a 4.7 µF bulk electrolytic capacitor should be
used between VCC and VSS for each eight devices. The
location of the capacitor should be close to where the
power supply is connected to the array.
System Applications
During the switch between active and standby condi-
tions, transient current peaks are produced on the ris-
MODE SELECT TABLE
Mode
CE#
OE#
PGM#
A0
X
A9
X
V
Outputs
PP
Read
V
V
X
X
X
X
X
X
X
X
D
OUT
IL
IL
Output Disable
Standby (TTL)
Standby (CMOS)
Program
X
V
X
X
High Z
High Z
High Z
IH
V
X
X
X
IH
V
± 0.3 V
X
X
X
CC
V
V
V
V
X
X
V
D
IN
IL
IL
IH
IH
IL
PP
PP
PP
Program Verify
Program Inhibit
V
V
X
X
V
V
D
OUT
IL
IH
V
X
X
X
X
High Z
01h
Manufacturer Code
Device Code
V
V
V
V
X
X
V
V
V
X
X
IL
IL
IL
IL
IL
H
H
Autoselect
(Note 3)
V
97h
IH
Notes:
1. V = 12.0 V ± 0.5 V.
H
2. X = Either V or V .
IH
IL
3. A1–A8 and A10–17 = V
IL
4. See DC Programming Characteristics for V voltage during programming.
PP
6
Am27C020
SPANSION [ SPANSION ]
