CE# should be decoded and used as the primary de-
vice-selecting function, while OE# be made a common
connection to all devices in the array and connected to
the READ line from the system control bus. This as-
sures that all deselected memory devices are in their
low-power standby mode and that the output pins are
only active when data is desired from a particular mem-
ory device.
ing and falling edges of Chip Enable. The magnitude of
these transient current peaks is dependent on the out-
put capacitance loading of the device. At a minimum, a
0.1 µF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
V
and V to minimize transient effects. In addition,
CC
SS
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM ar-
rays, a 4.7 µF bulk electrolytic capacitor should be used
System Applications
between V and V for each eight devices. The loca-
CC
SS
During the switch between active and standby condi-
tions, transient current peaks are produced on the ris-
tion of the capacitor should be close to where the
power supply is connected to the array.
MODE SELECT TABLE
Mode
CE#
OE#
PGM#
A0
X
A9
X
V
Outputs
PP
Read
V
V
X
X
X
X
X
X
X
X
D
OUT
IL
IL
Output Disable
Standby (TTL)
Standby (CMOS)
Program
X
V
X
X
High Z
High Z
High Z
IH
V
X
X
X
IH
V
± 0.3 V
X
X
X
CC
V
V
V
V
X
X
V
D
IN
IL
IL
IH
IH
IL
PP
PP
PP
Program Verify
Program Inhibit
V
V
X
X
V
V
D
OUT
IL
IH
V
X
X
X
X
High Z
01h
Manufacturer Code
Device Code
V
V
X
X
V
V
V
X
X
IL
IL
IL
IL
IL
H
H
Autoselect
(Note 3)
V
V
V
0Eh
IH
Notes:
1. V = 12.0 V ± 0.5 V.
H
2. X = Either V or V .
IH
IL
3. A1–A8 and A10–16 = V
IL
4. See DC Programming Characteristics for V voltage during programming.
PP
6
Am27C010
SPANSION [ SPANSION ]
