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AM26LV400BB-55RFK 参数 Datasheet PDF下载

AM26LV400BB-55RFK图片预览
型号: AM26LV400BB-55RFK
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K的×8位/ 256千×16位) CMOS 3.0伏只引导扇区闪存 [4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 48 页 / 1129 K
品牌: SPANSION [ SPANSION ]
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DATA SHEET  
Am29LV400B  
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)  
CMOS 3.0 Volt-only Boot Sector Flash Memory  
This product has been retired and is not available for designs. For new and current designs, S29AL004D supersedes Am29LV400B and is the factory-recommended migration path. Please  
refer to the S29AL004D data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.  
DISTINCTIVE CHARACTERISTICS  
Single power supply operation  
Embedded Algorithms  
— Full voltage range: 2.7 to 3.6 volt read and write  
operations for battery-powered applications  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
— Regulated voltage range: 3.0 to 3.6 volt read and  
write operations for compatibility with high  
performance 3.3 volt microprocessors  
— Embedded Program algorithm automatically  
writes and verifies data at specified addresses  
Manufactured on 0.32 µm process technology  
Minimum 1,000,000 write cycle guarantee per sector  
20-year data retention at 125°C  
— Compatible with 0.5 µm Am29LV400 device  
High performance  
— Reliable operation for the life of the system  
— Full voltage range: access times as fast as 70 ns  
Package option  
— 48-ball FBGA  
— Regulated voltage range: access times as fast as  
55 ns  
— 48-pin TSOP  
Ultra low power consumption (typical values at  
— 44-pin SO  
5 MHz)  
— Lead (Pb) - Free Packaging Available  
— 200 nA Automatic Sleep mode current  
— 200 nA standby mode current  
— 7 mA read current  
Compatibility with JEDEC standards  
— Pinout and software compatible with  
single-power supply Flash  
— 15 mA program/erase current  
— Superior inadvertent write protection  
Flexible sector architecture  
Data# Polling and toggle bits  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
seven 64 Kbyte sectors (byte mode)  
— Provides a software method of detecting program  
or erase operation completion  
— One 8 Kword, two 4 Kword, one 16 Kword, and  
seven 32 Kword sectors (word mode)  
Ready/Busy# pin (RY/BY#)  
— Provides a hardware method of detecting  
program or erase cycle completion  
— Supports full chip erase  
— Sector Protection features:  
Erase Suspend/Erase Resume  
— A hardware method of locking a sector to prevent  
any program or erase operations within that sector  
— Suspends an erase operation to read data from,  
or program data to, a sector that is not being  
erased, then resumes the erase operation  
— Sectors can be locked in-system or via  
programming equipment  
Hardware reset pin (RESET#)  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
— Hardware method to reset the device to reading  
array data  
Unlock Bypass Program Command  
— Reduces overall programming time when issuing  
multiple program command sequences  
Top or bottom boot block configurations  
available  
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data  
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.  
Publication# 21523  
Issue Date: December 4, 2006  
Rev: D Amendment/4