欢迎访问ic37.com |
会员登录 免费注册
发布采购

AM26LV400BB-55REE 参数 Datasheet PDF下载

AM26LV400BB-55REE图片预览
型号: AM26LV400BB-55REE
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K的×8位/ 256千×16位) CMOS 3.0伏只引导扇区闪存 [4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 48 页 / 1129 K
品牌: SPANSION [ SPANSION ]
 浏览型号AM26LV400BB-55REE的Datasheet PDF文件第7页浏览型号AM26LV400BB-55REE的Datasheet PDF文件第8页浏览型号AM26LV400BB-55REE的Datasheet PDF文件第9页浏览型号AM26LV400BB-55REE的Datasheet PDF文件第10页浏览型号AM26LV400BB-55REE的Datasheet PDF文件第12页浏览型号AM26LV400BB-55REE的Datasheet PDF文件第13页浏览型号AM26LV400BB-55REE的Datasheet PDF文件第14页浏览型号AM26LV400BB-55REE的Datasheet PDF文件第15页  
D A T A S H E E T  
DEVICE BUS OPERATIONS  
This section describes the requirements and use of  
the device bus operations, which are initiated through  
the internal command register. The command register  
itself does not occupy any addressable memory loca-  
tion. The register is composed of latches that store the  
commands, along with the address and data informa-  
tion needed to execute the command. The contents of  
the register serve as inputs to the internal state ma-  
chine. The state machine outputs dictate the function  
of the device. Table 1 lists the device bus operations,  
the inputs and control levels they require, and the re-  
sulting output. The following subsections describe  
each of these operations in further detail.  
Table 1. Am29LV400B Device Bus Operations  
DQ8–DQ15  
DQ0– BYTE# BYTE#  
Addresses  
(Note 1)  
Operation  
CE# OE# WE# RESET#  
DQ7  
DOUT  
DIN  
= VIH  
DOUT  
DIN  
= VIL  
Read  
Write  
L
L
L
H
L
H
H
AIN  
AIN  
DQ8–DQ14=High-Z,  
DQ15 = A-1  
H
VCC  
0.3 V  
VCC  
0.3 V  
Standby  
X
X
X
High-Z High-Z  
High-Z  
Output Disable  
Reset  
L
H
X
H
X
H
L
X
X
High-Z High-Z  
High-Z High-Z  
High-Z  
High-Z  
X
Sector Address, A6 = L,  
A1 = H, A0 = L  
Sector Protect (Note 2)  
L
L
X
H
H
X
L
L
X
VID  
VID  
VID  
DIN  
DIN  
DIN  
X
X
X
X
Sector Address, A6 = H,  
A1 = H, A0 = L  
Sector Unprotect (Note 2)  
Temporary Sector  
Unprotect  
AIN  
DIN  
High-Z  
Legend:  
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Addresses In, DIN = Data In, DOUT = Data Out  
Notes:  
1. Addresses are A17:A0 in word mode (BYTE# = VIH), A17:A-1 in byte mode (BYTE# = VIL).  
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector  
Protection/Unprotection” section.  
The internal state machine is set for reading array data  
Word/Byte Configuration  
upon device power-up, or after a hardware reset. This  
The BYTE# pin controls whether the device data I/O  
ensures that no spurious alteration of the memory  
pins DQ15–DQ0 operate in the byte or word configura-  
content occurs during the power transition. No com-  
tion. If the BYTE# pin is set at logic ‘1’, the device is in  
mand is necessary in this mode to obtain array data.  
word configuration, DQ15–DQ0 are active and con-  
Standard microprocessor read cycles that assert valid  
trolled by CE# and OE#.  
addresses on the device address inputs produce valid  
If the BYTE# pin is set at logic ‘0’, the device is in byte  
configuration, and only data I/O pins DQ0–DQ7 are  
active and controlled by CE# and OE#. The data I/O  
pins DQ8–DQ14 are tri-stated, and the DQ15 pin is  
used as an input for the LSB (A-1) address function.  
data on the device data outputs. The device remains  
enabled for read access until the command register  
contents are altered.  
Address access time (tACC) is the delay from stable ad-  
dresses to valid output data. The chip enable access  
time (tCE) is the delay from stable addresses and sta-  
ble CE# to valid data at the output pins. The output en-  
able access time (tOE) is the delay from the falling  
edge of OE# to valid data at the output pins (assuming  
the addresses have been stable for at least  
Requirements for Reading Array Data  
To read array data from the outputs, the system must  
drive the CE# and OE# pins to VIL. CE# is the power  
control and selects the device. OE# is the output con-  
trol and gates array data to the output pins. WE#  
should remain at VIH. The BYTE# pin determines  
whether the device outputs array data in words or  
bytes.  
tACC–tOE time).  
See “Reading Array Data” for more information. Refer  
to the AC Read Operations table for timing specifica-  
December 4, 2006 21523D4  
Am29LV400B  
9