DATA SHEET
Am29LV400B
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
This product has been retired and is not available for designs. For new and current designs, S29AL004D supersedes Am29LV400B and is the factory-recommended migration path. Please
refer to the S29AL004D data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
■ Embedded Algorithms
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations for compatibility with high
performance 3.3 volt microprocessors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Manufactured on 0.32 µm process technology
■ Minimum 1,000,000 write cycle guarantee per sector
■ 20-year data retention at 125°C
— Compatible with 0.5 µm Am29LV400 device
■ High performance
— Reliable operation for the life of the system
— Full voltage range: access times as fast as 70 ns
■ Package option
— 48-ball FBGA
— Regulated voltage range: access times as fast as
55 ns
— 48-pin TSOP
■ Ultra low power consumption (typical values at
— 44-pin SO
5 MHz)
— Lead (Pb) - Free Packaging Available
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
■ Compatibility with JEDEC standards
— Pinout and software compatible with
single-power supply Flash
— 15 mA program/erase current
— Superior inadvertent write protection
■ Flexible sector architecture
■ Data# Polling and toggle bits
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors (byte mode)
— Provides a software method of detecting program
or erase operation completion
— One 8 Kword, two 4 Kword, one 16 Kword, and
seven 32 Kword sectors (word mode)
■ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
— Supports full chip erase
— Sector Protection features:
■ Erase Suspend/Erase Resume
— A hardware method of locking a sector to prevent
any program or erase operations within that sector
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
— Sectors can be locked in-system or via
programming equipment
■ Hardware reset pin (RESET#)
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
— Hardware method to reset the device to reading
array data
■ Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
■ Top or bottom boot block configurations
available
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 21523
Issue Date: December 4, 2006
Rev: D Amendment/4