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71WS128NC0BFWAM3 参数 Datasheet PDF下载

71WS128NC0BFWAM3图片预览
型号: 71WS128NC0BFWAM3
PDF下载: 下载PDF文件 查看货源
内容描述: [Memory Circuit, 4MX16, CMOS, PBGA84, 11.6 X 8 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84]
分类和应用: 内存集成电路
文件页数/大小: 13 页 / 331 K
品牌: SPANSION [ SPANSION ]
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S71WS-N
Stacked Multi-Chip Product (MCP)
1.8 Volt-only Simultaneous Read/Write,
Burst-mode Flash Memory with CellularRAM
Data Sheet
Features
Power supply voltage of 1.7 V to 1.95 V
Burst Speed: 54 MHz, 66 MHz, 80 MHz
Package
– 8 x 11.6 mm, 9 x 12 mm
Operating Temperature
– Wireless, –25° C to +85° C
General Description
The S71WS-N Series is a product line of stacked Multi-Chip Product (MCP) packages and consists of the following items:
One or more flash memory die (for the S71WS512N, two S29WS256N devices are used)
CellularRAM Type 2 pSRAM
The products covered by this document are listed in the table below. For details about their specifications, please refer to the
individual constituent datasheet for further details.
pSRAM
Flash Density
S29WS128N
S29WS256N
S29WS512N
32 Mb
S71WS128NB0
64 Mb
S71WS128NC0
S71WS256NC0
S71WS512NC0
S71WS256ND0
S71WS512ND0
128 Mb
For detailed specifications, please refer to the individual data sheets.
Document
S29WS-N
32 M CellularRAM Type 2
64 M CellularRAM Type 2
128 M CellularRAM Type 2
Publication Identification Number (PID)
S29WS-N_00
CellularRAM_08
Cellram_07
Cellram_07
Publication Number
S71WS-N_00
Revision
A
Amendment
7
Issue Date
April 4, 2008