5th Generation Hi-Speed USB Flash Media and CIR Controller with Integrated Card Power FETs
Datasheet
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
COMMENTS
IO-U
(Note 7.4)
Integrated Power FET for
GPIO8 & GPIO10
Output Current
IOUT
100
mA
mA
Ω
GPIO8 or 10;
VdropFET = 0.23V
Short Circuit Current Limit
On Resistance
ISC
140
2.1
GPIO8 or 10;
VoutFET = 0V
RDSON
GPIO8 or 10;
IFET = 70mA
Output Voltage Rise Time
tDSON
800
µs
GPIO8 or 10;
CLOAD = 10µF
Integrated Power FET for
GPIO11)
Output Current
IOUT
200
mA
mA
Ω
GPIO11;
VdropFET = 0.46V
Short Circuit Current Limit
On Resistance
ISC
181
2.1
GPIO11;
VoutFET = 0V
RDSON
GPIO11;
IFET = 70mA
Output Voltage Rise Time
tDSON
800
60
µs
GPIO11;
CLOAD = 10µF
Supply Current Unconfigured
ICCINIT
45
mA
@ VDD18, VDD18PLL
1.8V
=
=
=
=
@ VDD33, VDDA33
3.3V
=
10
35
20
60
mA
mA
Supply Current Active
(Full Speed)
ICC
@ VDD18, VDD18PLL
1.8V
@ VDD33, VDDA33
3.3V
=
15
45
30
70
mA
mA
Supply Current Active
(High Speed)
ICC
@ VDD18, VDD18PLL
1.8V
@ VDD33, VDDA33
3.3V
=
15
30
mA
µA
Supply Current Standby
ICSBY
160
180
@ VDD18, VDD18PLL
1.8V
@ VDD33, VDDA33
3.3V
=
215
240
µA
Note 7.3 Output leakage is measured with the current pins in high impedance.
Note 7.4 See Appendix A for USB DC electrical characteristics.
Note 7.5 The Maximum power dissipation parameters of the package should not be exceeded
SMSC USB2231/USB2232
Revision 1.3 (07-12-05)
DATA2S3HEET
SMSC [ SMSC CORPORATION ]
