GaAs Hyperabrupt Junction
Varactor Diodes
GMV7811, GMV7821
GMV9801, GMV9821, GMV9822
Features
■ Constant Gamma of 1.0 and 1.25
■ Highly Linear Frequency Tuning
■ Constant Modulation Sensitivity
■ Lower Series Resistance and Higher Q in
Comparison to Equivalent Silicon
Hyperabrupt Varactors
Flip Chip
Chip
Outline Drawings
540-011
Description
0.026 (0.66 mm)
0.001 (0.025 mm)
This series of GaAs hyperabrupt varactor diodes features
a constant gamma of 1.0 and 1.25, which allows for a
relatively linear frequency tuning for VCOs, modulators and
tunable filters. Varactors in this series are grown by MBE
(Molecular Beam Epitaxy), which allows monolayer
control of the doping profile.This translates to superb wafer-
to-wafer uniformity. The series resistance is lower, and Q
is higher when compared to an equivalent silicon
hyperabrupt varactor. These diodes are suited for
applications at X band frequencies and above, where wide
change in frequency is desired. However, in certain
applications the GaAs hyperabrupt varactor exhibits a
higher surface noise in comparison to an equivalent silicon
varactor.
0.013 (0.33 mm)
0.001 (0.025 mm)
0.008 (0.20 mm)
0.001 (0.025 mm)
0.013 (0.33 mm)
0.001 (0.025 mm)
0.005 (0.13 mm)
0.001 (0.025 mm)
0.004 (0.10 mm)
0.001 (0.025 mm)
MAX.
Absolute Maximum Ratings
150-808
Characteristic
Value
18 V
METALLIZED GOLD DOT
0.0011 (0.0279 mm)
MIN. DIA.
Reverse Voltage (VR)
0.010 (0.25 mm)
0.001 (0.025 mm)
Forward Current (IF)
100 mA
Power Dissipation at 25°C
Operating Temperature (TOP
250 mW
)
-55°C to +150°C
-65°C to +200°C
0.010 (0.25 mm)
0.001 (0.025 mm)
Storage Temperature (TST
)
METALLIZED BACK
CONTACT GOLD
0.005 (0.13 mm) NOM.
Skyworks Solutions, Inc. [781] 376-3000 • Fax [781] 376-3100 • Email sales@skyworksinc.com • www.skyworksinc.com
1
Specifications subject to change without notice. 5/03A