點晶科技股份有限公司
SILICON TOUCH TECHNOLOGY INC.
PS121
Absolute Maximum Ratings
Parameter
Supply Voltage
Symbol
VDD
Rating
Unit
V
-0.5
-0.5
~
+7.5
+7.5
Output Sink Current
Isink
30
mA
Output Voltage
VPG
Pd
~
300
~
V
mW
oC
oC
oC
Power Dissipation
Storage Temperature
Operating Temperature
Junction Temperature
Package Thermal Resistance
Tstg
Topr
Tj
-40
-30
+125
+90
~
150
160
oC/W
θJA
Electrical characteristics, Vcc=5V, Ta = 25 oC. (unless otherwise specified)
Test Condition
Parameter
MIN
4.05
0.1
TYP
4.30
0.2
MAX
4.55
0.3
Unit
V
Vth
Vhy
IDD
Detecting Threshold Voltage
Vth Hysteresis Voltage
Circuit Current
V
VCC=5V
0.97
2.5
mA
Td
Id
Delay Time
Cd=0.1μF
21.4
8.7
ms
μA
V
Constant Current at Cd Pin
PG Output Saturation Voltage
8.0
9.4
V+5=4.0V,
Isink=10mA
Vsat
0.128 0.192
VDD = 0Æ 5
VDD = 5Æ 0
1.79
1.72
1.87
1.77
+1
1.95
1.82
+2
Vthcd
Threshold Voltage in Pin Cd
Temperature coefficient
V
ΔT
mV/°C
Voltage Detecting IC
-3-
Version：A.017
SITI [ SILICON TOUCH TECHNOLOGY INC. ]
