點晶科技股份有限公司
42-DL214
SILICON TOUCH TECHNOLOGY INC.
PAD DESCRIPTIONS
PAD NO.
PAD NAME
DESCRIPTIONS
1
2
3
4
IN
Input Pad(Active High )
Supply Voltage
Output Pad Sinking Current(Active Low)
Ground
VDD
OUT
VSS
DIE CONFIGURATION
1.
2.
IN
VDD
4.
3.
OUT
VSS
Center (426.4, 99.7)
Unit：um
Die Size: 522.2um * 554.7um
Die Thickness: 12mil(=300um)
Pad Size: 100um * 100um
* Note: SiTI reserves the right to improve the device geometry and manufacturing
processes without prior notice. Though these improvements may result in
slight geometry changes, they will not affect die electrical characteristics
and pad layouts.
42-DL214-A.03(pre)
-3-
Version：A.03
SITI [ SILICON TOUCH TECHNOLOGY INC. ]
