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SRF-2016Z 参数 Datasheet PDF下载

SRF-2016Z图片预览
型号: SRF-2016Z
PDF下载: 下载PDF文件 查看货源
内容描述: 200 - 600 MHz的硅锗中频接收机 [200 - 600 MHz Silicon Germanium IF Receiver]
分类和应用: 接收机
文件页数/大小: 7 页 / 122 K
品牌: SIRENZA [ SIRENZA MICRODEVICES ]
 浏览型号SRF-2016Z的Datasheet PDF文件第1页浏览型号SRF-2016Z的Datasheet PDF文件第3页浏览型号SRF-2016Z的Datasheet PDF文件第4页浏览型号SRF-2016Z的Datasheet PDF文件第5页浏览型号SRF-2016Z的Datasheet PDF文件第6页浏览型号SRF-2016Z的Datasheet PDF文件第7页  
SRF-2016 SiGe IF Receiver  
Product Specifications – IF Input  
Parameters  
Test Conditions (see page 2)  
Unit  
MHz  
dB  
Min.  
Typ.  
Max.  
IF Frequency Range  
200  
600  
INP/INN Return Loss  
INP/INN Common mode voltage  
Gain  
50 ohm nominal differential input, Note 2  
Internally generated  
20  
2
V
dB  
28  
30  
32  
14  
-3  
Input P1dB  
dBm  
dBm  
dBm  
dB  
-27  
-25  
+13  
-14  
14  
High gain setting  
GC1 = GC2 = +5V  
Input IP2  
Input IP3  
DSB Noise Figure  
Gain  
dB  
10  
-9  
12  
Input P1dB  
dBm  
dBm  
dBm  
dB  
-7  
Medium gain setting  
GC1 = +5V  
Input IP2  
+41  
+3  
17  
GC2 = 0V  
Input IP3  
DSB Noise Figure  
Gain  
dB  
-7  
-5  
Input P1dB  
dBm  
dBm  
dBm  
dB  
10  
12  
Low gain setting  
GC1 = GC2 = 0V  
Input IP2  
+49  
+24  
33  
Input IP3  
DSB Noise Figure  
Product Specifications – Miscellaneous  
Parameters  
Additional Test Conditions  
Unit  
V
Min.  
Typ.  
+5.0  
195  
35  
Max.  
Supply Voltage (V  
)
+4.75  
+5.25  
CC  
Supply Current (I  
)
mA  
ºC/W  
V
CC  
Thermal Resistance  
Hot spot on die to lead  
Logic level zero  
45  
GC1, GC2 Input V  
GC1, GC2 Input V  
0
0.3xV  
IL  
CC  
CC  
Logic level one  
V
0.7xV  
40  
V
IH  
CC  
GC1, GC2 Input Impedance  
kohm  
Test Conditions  
Absolute Maximum Ratings  
V
= +5V , T = +25ºC,  
DC  
Parameters  
Value  
6.0  
Unit  
CC  
LO Input = 0 dBm, 400 MHz, IF Input = 401 MHz  
Supply Voltage  
LO Input  
V
DC  
Gain State  
Low Gain  
GC1 Voltage  
GC2 Voltage  
IF Power  
0 dBm  
+10  
dBm  
dBm  
ºC  
0V  
0V  
0V  
IF Input  
+10  
Medium Gain  
High Gain  
+5V  
+5V  
-20 dBm  
-40 dBm  
Operating Temperature  
Storage Temperature  
-40 to +85  
-65 to +150  
+5V  
ºC  
Operation of this device beyond any one of these limits may  
cause permanent damage. For reliable continuous operation the  
device voltage and current must not exceed the maximum operat-  
ing values specified in the product specifications table.  
Note 1: To achieve 20 dB port match above 100 MHz, the parasitic inductance of the package must be matched out.  
Note 2: To achieve 20 dB of port match, the parasitic inductance of the package, board, and L4, L5 must be matched out at  
the center frequency with a series capacitor.  
303 South Technology Court  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
2
http://www.sirenza.com  
EDS 102137 Rev C