Preliminary
SBB-1089
SBB-1089Z
50 - 850 MHz, Cascadable
RoHS Compliant
& Green Package
Pb
Product Description
Sirenza Microdevices’ SBB-1089 is a high performance InGaP HBT MMIC
amplifier utilizing a Darlington configuration with an active bias network.
The active bias network provides stable current over temperature and
process Beta variations. Designed to run directly from a 5V supply, the
SBB-1089 does not require a dropping resistor as compared to typical
Darlington amplifiers. The SBB-1089 product is designed for high linearity
5V gain block applications that require small size and minimal external
components. It is internally matched to 50 ohms.
Active Bias InGaP/GaAs HBT MMIC Amplifier
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU
Directive 2002/95. This package is also manufactured with green molding
compounds that contain no antimony trioxide nor halogenated fire retardants.
Product Features
• Available in Lead Free, RoHS compliant, & Green packaging
• IP3 = 43.1 dBm @ 240MHz
Gain & Return Loss vs. Frequency (w/ App. Ckt.)
• P1dB = 19.6 dBm @ 500MHz
35
• Single Fixed 5V Supply
• Robust 1000V ESD, Class 1C
• Patented Thermal Design & Patent Pending Bias Circuit
25
S21
15
• Low Thermal Resistance
• MSL 1 moisture rating
5
-5
S11
-15
Applications
• Receiver IF Amplifier
-25
S22
• Cellular, PCS, GSM, UMTS
• Wireless Data, Satellite Terminals
-35
50
150
250
350
450
550
650
750
850
Frequency (MHz)
Symbol
Parameters
Units
Frequency
Min.
Typ.
Max.
70 MHz
240 MHz
400 MHz
15.5
15.5
15.5
S21
Small Signal Gain
dB
14
17
70 MHz
240 MHz
400 MHz
19
19
19
P1dB
Output Power at 1dB Compression
Third Order Intercept Point
dBm
dBm
18
70 MHz
240 MHz
400 MHz
42
43
41
IP3
41.5
S11, S22: Minimum 10dB Return Loss (typ.)
Input Return Loss
Bandwidth
MHz
dB
50 - 850
18
S11
S22
S12
NF
VD
ID
70 -500MHz
70 -500MHz
70 -500MHz
500 MHz
Output Return Loss
dB
16
Reverse Isolation
dB
18
Noise Figure
dB
3.2
5
4.2
5.3
98
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction - lead)
V
mA
°C/W
82
90
R
TH, j-l
97
Test Conditions:
VD = 5V
ID = 90mA Typ.
OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm
Tested with Bias Tees
TL = 25°C
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103998 Rev B
SIRENZA [ SIRENZA MICRODEVICES ]
