STT320
Thyristor-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
Unit
TVJ=TVJM; VR=VRRM; VD=VDRM
70
40
mA
mA
V
IRRM
IDRM
VT, VF
VTO
IT, IF=600A; TVJ=25oC
For power-loss calculations only (TVJ=140oC)
1.32
0.8
V
0.82
m
rT
VD=6V;
TVJ=25oC
TVJ=-40oC
2
3
V
VGT
IGT
VD=6V;
TVJ=25oC
150
200
mA
TVJ=-40oC
TVJ=TVJM;
VD=2/3VDRM
0.25
10
V
VGD
IGD
mA
TVJ=25oC; tp=30us; VD=6V
IG=0.45A; diG/dt=0.45A/us
TVJ=25oC; VD=6V; RGK=
TVJ=25oC; VD=1/2VDRM
IG=1A; diG/dt=1A/us
IL
IH
200
150
2
mA
mA
us
tgd
TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=50V/us; VD=2/3VDRM
typ.
200
us
tq
TVJ=125oC; IT, IF=400A; -di/dt=50A/us
760
275
uC
A
QS
IRM
per thyristor/diode; DC current
per module
0.112
0.056
K/W
K/W
RthJC
RthJK
per thyristor/diode; DC current
per module
0.152
0.076
Creeping distance on surface
Strike distance through air
12.7
9.6
50
mm
mm
m/s2
dS
dA
a
Maximum allowable acceleration
FEATURES
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
ADVANTAGES
* International standard package
* Direct copper bonded Al2O3-ceramic
base plate
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
* Planar passivated chips
* Isolation voltage 3600 V~
* Lighting control
* Contactless switches
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
