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NEW MBR30150PT 参数 Datasheet PDF下载

NEW  MBR30150PT图片预览
型号: NEW MBR30150PT
PDF下载: 下载PDF文件 查看货源
内容描述: 肖特基势垒二极管肖特基势垒二极管,高结温低漏电流肖特基势垒二极管高TJM低IRRM肖特基势垒二极管, TJ = -65 ° C〜 175 ° C, TJM = 175 ℃。 [肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。]
分类和应用: 二极管
文件页数/大小: 3 页 / 137 K
品牌: SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
 浏览型号NEW  MBR30150PT的Datasheet PDF文件第1页浏览型号NEW  MBR30150PT的Datasheet PDF文件第3页  
MBR30100PT thru MBR30200PT  
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers  
100  
1000  
¢J  
¢J  
T
T
J
=175  
=150  
10  
1
J
¢J  
¢J  
T
J
=125  
T
J=100  
0.1  
¢J  
T
J=75  
100  
0.01  
0.001  
0.0001  
¢J  
T
T
J
=50  
=25  
¢J  
J
¢J  
¢J  
¢J  
J
=25  
T
T
T
J
J
=175  
=125  
0
20  
40  
60  
80  
(V)  
100  
REVERSE VOLTAGE, V  
R
10  
Figure 2. Typical Values Of Reverse Current  
Vs. Reverse Voltage (Per Leg)  
1000  
1
¢J  
TJ=25  
0.1  
100  
0
0.5  
1
1.5  
2
2.5  
0
20  
40  
60  
80  
(V)  
100  
FORWARD VOLTAGE DROP, VFM(V)  
REVERSE VOLTAGE, V  
R
Figure 1. Max. Forward Voltage Drop  
Characteristics (PerLeg)  
Figure 3. Typical Junction Capacitance Vs.  
Reverse Voltage (Per Leg)  
10  
1
D = 0.50  
D = 0.33  
D = 0.25  
D = 0.17  
D = 0.08  
0.1  
PDM  
t1  
t2  
0.01  
Notes:  
1.Duty factor D = t1 / t2  
2.Peak = PDM x ZthJC + TC  
SINGLE PULSE  
(THERMAL RESISTANCE)  
T
j
0.001  
0.0000  
1
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t1, RECTANGULAR PULSE DURATION (SECONDS)  
Figure 4. Max. Thermal Impedance ZthJC Characteristics (PerLeg)