MUR6020PT, MUR6030PT
Ultra Fast Recovery Diodes
120
A
0.8
30
TVJ= 100°C
VR = 100V
TVJ= 100°C
VR = 100V
A
uC
0.6
100
80
60
40
20
0
25
Qr
IRM
IF= 15A
IF= 35A
IF= 70A
IF
20
15
10
5
IF= 15A
IF= 35A
IF= 70A
0.4
0.2
0.0
TVJ=150°C
TVJ=100°C
TVJ= 25°C
0
V
A/us
-diF/dt
0.0
0.4
0.8
1.2
10
100
1000
0
200 400 600 800 1000
A/us
-diF/dt
VF
Fig. 1 Forward current IF versus VF
1.6
Fig. 2 Typ. reverse recovery charge Qr
versus -diF/dt
Fig. 3 Typ. peak reverse current IRM
versus -diF/dt
70
6
1.8
TVJ= 100°C
IF = 35A
TVJ= 100°C
ns
V
5
us
VR = 100V
tfr
60
1.4
Kf
1.5
VFR
VFR
trr
tfr
50
40
1.2
4
3
2
1
0
1.2
0.9
0.6
0.3
0.0
1.0
30
IF= 15A
0.8
IRM
IF= 35A
IF= 70A
20
0.6
10
0
Qr
0.4
A/us
800
0
40
80
120
160
0
200 400 600 800 1000
A/us
0
200
400
600
diF/dt
°C
TVJ
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Typ. recovery time trr
versus -diF/dt
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF/dt
1.2
K/W
1.0
0.8
ZthJC
0.6
0.4
0.2
0.0
s
0.001
0.01
0.1
1
10
t
Fig. 7 Transient thermal impedance junction to case
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
