MUR60120PT
Ultra Fast Recovery Diodes
70
A
6
50
A
TVJ=100°C
VR= 540V
TVJ=100°C
VR= 540V
µC
60
5
40
30
20
10
0
max.
typ.
IF=30A
50
40
30
20
10
0
IRM
IF=30A
IF=60A
IF=30A
IF=15A
4
3
2
1
0
IF=60A
IF=30A
IF=15A
IF
Qr
TVJ=25°C
TVJ=100°C
TVJ=150°C
max.
typ.
0
1
2
3
4
1
10
100
1000
A/µs
V
0
200
-diF/dt
400 600
A/µs
VF
-diF/dt
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
1.4
1.2
1.0
1.0
60
V
1200
ns
TVJ=100°C
µs
VR=540V
50
40
30
20
10
0
1000
0.8
VFR
IF=30A
IF=60A
IF=30A
IF=15A
max.
IRM
800
600
trr
Kf
VFR
0.6
0.4
0.2
0.0
tfr
0.8
0.6
QR
400
200
0.4
0.2
0.0
tfr
typ.
TVJ=125°C
IF=30A
0
A/µs
600
A/µs
0
40
80
120 °C 160
0
200
400
600
0
200
400
TJ
-diF/dt
diF/dt
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage
versus diF/dt.
1.0
K/W
0.8
ZthJC
0.6
0.4
0.2
0.0
s
0.001
0.01
0.1
1
10
t
Fig. 7 Transient thermal impedance junction to case.
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
