MUR3080, MUR30100
Ultra Fast Recovery Diodes
Symbol
Test Conditions
Characteristic Values
Unit
typ.
max.
TVJ=25oC; VR=VRRM
750
250
7
uA
uA
mA
IR
o
.
TVJ=25 C; VR=0.8 VRRM
o
.
TVJ=125 C; VR=0.8 VRRM
IF=36A; TVJ=150oC
2
2.4
V
VF
TVJ=25oC
For power-loss calculations only
1.5
12.5
0.9
V
VTO
rT
m
TVJ=TVJM
RthJC
RthCK
RthJA
0.25
K/W
35
50
18
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC
_
VR=540V; IF=30A; -diF/dt=240A/us; L<0.05uH; TVJ=100 C
35
16
ns
A
trr
o
IRM
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
JEDEC TO-247AC
* Antiparallel diode for high frequency
switching devices
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Planar passivatd chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
* Soft recovery behaviour
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
