MUR2960S
Ultra Fast Recovery Diodes
Dimensions TO-263(D
2
PAK)
A
A
NC
A=Anode, NC= No connection, TAB=Cathode
C
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min.
Max.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
8.00
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.89
Inches
Min. Max.
.160
.080
.020
.045
.018
.045
.340
.315
.190
.110
.039
.055
.029
.055
.380
.350
C(TAB)
9.65
10.29
6.22
8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
0.46
15.88
2.79
1.40
1.78
0.20
0.74
.380
.405
.245
.320
.100 BSC
.575
.090
.040
.050
0
.018
.625
.110
.055
.070
.008
.029
MUR2960S
V
RSM
V
600
V
RRM
V
600
1.
2.
3.
4.
Gate
Collector
Emitter
Collector
Botton Side
Symbol
I
FRMS
I
FAVM
I
FRM
Test Conditions
T
VJ
=T
VJM
T
C
=85
o
C; rectangular, d=0.5
t
p
<10us; rep. rating, pulse width limited by T
VJM
T
VJ
=45
o
C
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
Maximum Ratings
70
29
375
300
320
260
280
450
420
340
320
-40...+150
150
-40...+150
Unit
A
I
FSM
T
VJ
=150
o
C
T
VJ
=45
o
C
A
It
2
T
VJ
=150 C
o
A
2
s
T
VJ
T
VJM
T
stg
P
tot
Weight
T
C
=25
o
C
o
C
125
2
W
g
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
