MUR20100, MUR20120
Ultra Fast Recovery Diodes
70
A
6
uC
5
50
A
TVJ=100°C
VR= 540V
T
VJ=100°C
VR= 540V
60
40
max.
typ.
IF=30A
IF=60A
IF=30A
IF=15A
50
40
30
20
10
0
IRM
IF=30A
IF=60A
IF=30A
IF=15A
4
3
2
1
0
IF
TVJ= 25°C
TVJ=100°C
TVJ=150°C
Qr
30
20
10
0
max.
typ.
V
1
10
-diF/dt
100
1000
0
200
-diF/dt
400
600
A/us
0
1
VF
2
3
4
A/us
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
1.4
1.2
1.0
60
1200
s
T
VJ=100°C
ns
V
0.9
VR=540V
1000
50
VFR
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
IF=30A
IRM
40
30
20
10
0
800
600
Kf
trr
max.
tfr
IF=60A
IF=30A
IF=15A
VFR
0.8
0.6
QR
400
200
0.4
tfr
typ.
0.2
0.0
TVJ=125°C
IF=30A
0
A/us
A/us
600
0
40
80
120
160
0
200
-diF/dt
400
600
0
200
400
°C
TVJ
-diF/dt
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage
versus diF/dt.
Fig. 7 Transient thermal impedance junction to case.
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
