MBR40100PT
High Tjm (+175oC) Schottky Barrier Diodes
1000
100
10
1000
T =175°C
J
100
10
150°C
125°C
1
100°C
75°C
.1
50°C
25°C
.01
.001
0
20 60
ReverseVoltage - V (V)
40
80 100
T =175°C
J
R
T =125°C
J
Fig.2-Typical Values Of Reverse Current
Vs. Reverse Voltage (PerLeg)
T = 25°C
J
1000
1
T = 25°C
J
100
.1
0
20
40
60
ReverseVoltage- V (V)
80 100
0
.4
.8
1.2
ForwardVoltageDrop- V (V)
1.6
2
R
FM
Fig.1-Max. Forward Voltage Drop Characteristics
Fig.3-Typical Junction Capacitance
Vs. Reverse Voltage (PerLeg)
(PerLeg)
10
1
.1
D= 0.50
D=0.33
D=0.25
D=0.17
P
DM
t
1
D= 0.08
t
2
Notes:
1. Duty factor D= t / t
.01
1
2. PeakT =P xZ +T
2
SinglePulse
(Thermal Resistance)
C
J
DM thJC
10
.001
.00001
.0001 .001
.01
.1
t , Rectangular PulseDuration(Seconds)
1
100
1
Fig.4-Max. Thermal Impedance ZthJC Characteristics (PerLeg)
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
