MBR10150FCT
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
d= 0.2
d= 0.5
6
5
4
3
2
1
0
d= 0.1
Rth(j-a) = Rth(j-c)
d= 0.05
d= 1
Rth(j-a) = 15℃/W
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0
25
50
75
100
125
150
175
IF(av)(A)
Tamb(℃)
Figure 1. Average forward power dissipation versus
average forward current (per diode)
Figure 2. Average forward current versus ambient
temperature (d= 0.5, per diode)
80
70
60
50
40
30
20
10
0
1.0
0.8
0.6
0.4
0.2
0.0
d= 0.5
Tc = 50
℃
d= 0.2
d= 0.1
Tc = 75℃
Tc = 125
℃
Single pulse
1E-3
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
t(s)
tp(s)
Figure 3. Non repetitive surge peak forward current
versus overload duration (maximum values, per diode)
Figure 4. Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
1E+5
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
1E-2
200
F = 1MHz
Tj = 25℃
T
T
j
j
= 175
℃
= 150
℃
℃
100
50
T
j
= 125
T
T
j
= 75℃
20
10
j
= 25℃
1
2
5
10
20
50
100
200
0
25
50
75
100
125
150
VR(V)
VR(V)
Figure 5. Reverse leakage current versus reverse
voltage applied (ytpical values, per diode)
Figure 6. Junction capacitance versus reverse
voltage applied (typical values, per diode)
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