HUR830S
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
30
A
400
nC
15
A
TVJ = 100°C
VR = 150V
TVJ = 100°C
VR = 150V
IRM
IF
TVJ =150°C
TVJ =100°C
TVJ = 25°C
300
200
100
0
20
Qr
IF = 20A
IF = 10A
IF = 5A
10
IF = 20A
IF = 10A
IF = 5A
10
0
5
0
0.0
0.5
1.0
1.5
2.0
A/us
100
1000
0
200 400 600 800 1000
V
A/us
-diF/dt
VF
-diF/dt
Fig. 1 Forward current IF versus VF
1.4
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
70
16
0.8
s
TVJ = 100°C
TVJ = 100°C
V
VR = 150V
IF = 10A
ns
60
tfr
trr
1.2
Kf
12
0.6
VFR
IF = 20A
IF = 10A
IF = 5A
VFR
tfr
1.0
50
40
30
8
4
0
0.4
0.2
0.0
IRM
Qr
0.8
0.6
A/us
0
40
80
120
160
0
200 400 600 800 1000
A/us
0
200 400 600 800 1000
°C
diF/dt
TVJ
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
10
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
1
1
2
3
1.449
0.558
0.493
0.005
0.0003
0.017
ZthJC
0.1
0.01
0.001
0.00001
s
0.0001
0.001
0.01
0.1
1
t
Fig. 7 Transient thermal resistance junction to case
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
