HUR6060PT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
70
A
3000
nC
50
A
TVJ= 100°C
VR = 300V
TVJ= 100°C
VR = 300V
60
2500
40
30
20
10
0
IRM
Qr
IF= 60A
IF= 30A
IF= 15A
IF 50
40
2000
1500
1000
500
0
TVJ=150°C
TVJ=100°C
IF= 60A
IF= 30A
IF= 15A
30
20
TVJ=25°C
10
0
0.0
A/us
-diF/dt
0.5
1.0
1.5
VF
V2.0
100
1000
0
200 400 600 800 1000
A/us
-diF/dt
Fig. 1 Forward current IF versus VF
2.0
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
130
20
1.2
us
TVJ= 100°C
VR = 300V
ns
V
VFR
120
VFR
tfr
tfr
trr
1.5
Kf
15
10
5
0.9
IF= 60A
110
IF= 30A
IF= 15A
1.0
100
0.6
0.3
0.0
IRM
90
80
70
0.5
Qr
TVJ= 100°C
IF = 30A
0.0
0
A/us
0
40
80
120
160
0
200 400 600 800 1000
A/us
0
200 400 600 800 1000
°C
diF/dt
TVJ
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
1
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
1
2
3
0.465
0.179
0.256
0.0052
0.0003
0.0396
0.1
ZthJC
0.01
0.001
0.00001
s
0.0001
0.001
0.01
0.1
1
t
Fig. 7 Transient thermal resistance junction to case
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
