HUR30100PT, HUR30120PT
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
40
A
35
3.0
C
50
A
TVJ= 100°C
VR = 600V
TVJ= 100°C
VR = 600V
2.5
40
Qr
IRM
30
25
20
15
10
5
IF
TVJ=150°C
TVJ=100°C
TVJ= 25°C
2.0
1.5
1.0
0.5
0.0
IF= 30A
IF= 15A
IF= 7.5A
30
20
10
0
IF= 30A
IF= 15A
IF= 7.5A
0
A/us
-diF/dt
0
1
2
3
VF
V
4
100
1000
0
200 400 600 800 1000
A/us
-diF/dt
Fig. 1 Forward current IF versus VF
2.0
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
180
120
1.2
us
TVJ= 100°C
TVJ= 100°C
VR = 600V
IF = 15A
ns
V
VFR
tfr
1.5
Kf
160
VFR
trr
80
40
0
0.8
tfr
IF= 30A
IF= 15A
IF= 7.5A
1.0
140
IRM
0.4
0.5
120
Qr
0.0
100
0.0
A/us
0
40
80
120
160
0
200 400 600 800 1000
A/us
0
200 400 600 800 1000
°C
diF/dt
TVJ
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
10
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
1
1
2
3
0.9084
0.3497
0.3419
0.0052
0.0003
0.0165
ZthJC
0.1
0.01
0.001
0.00001
s
0.0001
0.001
0.01
0.1
1
t
Fig. 7 Transient thermal resistance junction to case
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
