HUR2x60-30, HUR2x60-40
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
160
A
800
nC
25
A
TVJ = 100°C
VR = 150V
TVJ = 100°C
VR = 150V
20
15
10
5
120
600
400
200
0
IRM
IF = 120A
IF = 60A
IF = 30A
IF
Qr
TVJ=150°C
TVJ=100°C
TVJ= 25°C
IF = 120A
IF = 60A
IF = 30A
80
40
0
0
V
0.0
0.5
1.0
1.5
VF
2.0
A/us
-diF/dt
100
1000
0
200 400 600 800 1000
A/us
-diF/dt
Fig. 1 Forward current IF versus VF
1.4
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
90
14
0.85
us
TVJ = 100°C
TVJ = 100°C
ns
V
IF = 60A
VR = 150V
1.2
Kf
12
0.80
trr
VFR
tfr
80
tfr
VFR
1.0
10
8
0.75
0.70
0.65
0.60
IF = 120A
IRM
70
60
50
IF = 60A
IF = 30A
0.8
Qr
0.6
0.4
6
4
A/us
0
40
80
120
160
0
200 400 600 800 1000
A/us
0
200 400 600 800 1000
°C
diF/dt
TVJ
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
1
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
0.1
1
2
3
4
0.307
0.353
0.089
0.101
0.0055
0.009
0.0007
0.04
ZthJC
0.01
0.001
0.0001
s
0.00001
0.0001
0.001
0.01
0.1
1
10
t
Fig. 7 Transient thermal resistance junction to case