HUR2x60-100, HUR2x60-120
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
100
A
15.0
C
120
TVJ= 100°C
VR = 600V
TVJ= 100°C
VR = 600V
A
12.5
Qr
80
IRM
IF
TVJ=150°C
TVJ=100°C
TVJ= 25°C
10.0
7.5
5.0
2.5
0.0
80
40
0
60
40
20
0
IF= 120A
IF= 60A
IF= 30A
IF= 120A
IF= 60A
IF= 30A
V
A/us
0
1
2
VF
3
100
1000
0
200 400 600 800 1000
A/us
-diF/dt
-diF/dt
Fig. 1 Forward current IF versus VF
2.0
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
300
60
1.2
TVJ= 100°C
ns
VR = 600V
V
us
280
VFR
VFR
40
trr
tfr
1.5
Kf
tfr
0.8
260
240
220
200
1.0
IF= 120A
IF= 60A
IF= 30A
IRM
20
0
0.4
0.5
Qr
TVJ= 100°C
IF = 60A
0.0
0.0
A/us
0
40
80
120
160
0
200 400 600 800 1000
A/us
0
200 400 600 800 1000
°C
diF/dt
TVJ
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
1
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
0.1
1
2
3
4
0.212
0.248
0.063
0.077
0.0055
0.0092
0.0007
0.0391
ZthJC
0.01
0.001
0.0001
s
0.00001
0.0001
0.001
0.01
0.1
1
10
t
Fig. 7 Transient thermal resistance junction to case
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
