HUR2x30-40
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
70
A
1600
nC
50
TVJ= 100°C
VR = 200V
TVJ= 100°C
VR = 200V
A
60
40
IRM
1200
IF
50
40
30
20
10
0
Qr
TVJ=150°C
TVJ=100°C
TVJ= 25°C
30
20
10
0
IF= 60A
IF= 30A
IF= 15A
IF= 60A
IF= 30A
IF= 15A
800
400
0
V
A/us
-diF/dt
0.0
0.5
1.0
1.5
VF
2.0
100
1000
0
200 400 600 800 1000
A/us
-diF/dt
Fig. 1 Forward current IF versus VF
2.0
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
90
15
0.6
us
TVJ=100°C
TVJ= 100°C
VR = 200V
IF = 30A
ns
V
tfr
trr
VFR
1.5
Kf
80
70
60
50
tfr
IF= 60A
IF= 30A
IF= 15A
10
0.4
VFR
1.0
IRM
5
0.2
0.5
Qr
0.0
0
0.0
A/us
0
40
80
120
160
0
200 400 600 800 1000
A/us
0
200 400 600 800 1000
°C
diF/dt
TVJ
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
1
K/W
i
Rthi (K/W)
ti (s)
1
2
3
4
0.436
0.482
0.117
0.115
0.0055
0.0092
0.0007
0.0418
0.1
ZthJC
0.01
0.001
0.0001
s
0.00001
0.0001
0.001
0.01
0.1
1
t
Fig. 7 Transient thermal resistance junction to case
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
