HUR2x30-100, HUR2x30-120
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
70
A
5
60
A
TVJ= 100°C
VR = 600V
TVJ= 100°C
VR = 600V
C
60
IF 50
40
50
4
3
2
1
0
Qr
IRM
40
30
20
10
0
TVJ=150°C
TVJ=100°C
TVJ= 25°C
IF= 60A
IF= 30A
IF= 15A
IF= 60A
IF= 30A
IF= 15A
30
20
10
0
A/us
-diF/dt
0
1
2
3
VF
V
4
100
1000
0
200 400 600 800 1000
A/us
-diF/dt
Fig. 1 Forward current IF versus VF
2.0
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
220
120
1.2
us
TVJ= 100°C
TVJ= 100°C
VR = 600V
ns
IF = 30A
V
200
VFR
tfr
1.5
Kf
tfr
trr
80
40
0
0.8
VFR
180
160
140
120
IF= 60A
IF= 30A
IF= 15A
1.0
IRM
0.4
0.5
Qr
0.0
0.0
A/us
0
40
80
120
160
0
200 400 600 800 1000
A/us
0
200 400 600 800 1000
°C
diF/dt
TVJ
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
10
Constants for ZthJC calculation:
K/W
i
Rthi (K/W)
ti (s)
1
1
2
3
4
0.436
0.482
0.117
0.115
0.0056
0.0092
0.0007
0.0418
ZthJC
0.1
0.01
0.001
0.0001
s
0.00001
0.0001
0.001
0.01
0.1
1
t
Fig. 7 Transient thermal resistance junction to case
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
