HUR2x30-30
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
60
A
800
nC
30
A
TVJ = 100°C
VR = 150V
TVJ = 100°C
VR = 150V
25
600
400
200
0
IRM
IF
40
Qr
20
15
10
5
IF = 60A
IF = 30A
IF = 15A
IF = 60A
IF = 30A
IF = 15A
TVJ=150°C
TVJ=100°C
TVJ= 25°C
20
0
0
V
0.0
0.5
1.0
VF
1.5
A/us
-diF/dt
100
1000
0
200 400 600 800 1000
A/us
-diF/dt
Fig. 1 Forward current IF versus VF
1.4
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
90
14
1.2
TVJ = 100°C
TVJ = 100°C
ns
us
1.0
V
IF = 30A
VR = 150V
1.2
Kf
80
trr
VFR
tfr
tfr
12
10
8
0.8
0.6
0.4
0.2
0.0
1.0
70
60
50
40
VFR
IRM
IF = 60A
IF = 30A
IF = 15A
0.8
Qr
0.6
0.4
A/us
0
40
80
120
160
0
200 400 600 800 1000
A/us
0
200 400 600 800 1000
°C
diF/dt
TVJ
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
10
Constants for ZthJC calculation:
K/W
1
i
Rthi (K/W)
ti (s)
ZthJC
1
2
3
4
0.436
0.482
0.117
0.115
0.0055
0.009
0.0007
0.042
0.1
0.01
0.001
0.0001
s
0.00001
0.0001
0.001
0.01
0.1
1
10
t
Fig. 7 Transient thermal resistance junction to case
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
