BTB/BTA10
Discrete Triacs(Non-Isolated/Isolated)
Fig. 7: R elative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 8: R elative variation ofcritical rate ofdecrease
ofmain current versus (dV/dt)c (typical values).
IGT,IH,IL[Tj] / IG,TIH,IL [Tj=25°C]
2.5
(dI/dt)c [(dV/dt)c] / S pecified (dI/dt)c
2.0
1.8
C
2.0
1.6
IGT
B
1.4
1.5
1.2
BW/CW
IH & IL
1.0
1.0
0.8
0.5
0.6
(dV/dt)c (V/µs )
Tj(°C)
0.4
0.0
0.1
1.0
10.0
100.0
-40 -20
0
20
40
60
80 100 120 140
Fig. 9: R elative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj s pecified]
6
5
4
3
2
1
Tj (°C)
0
0
25
50
75
100
125
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
