3TA80GKXXNB-B
Three Phase Thyristor Module (Half Bridge)
Average On-State Current Vs Maximum Allowable�
Transient Thermal Impedance
Case Temperature(Single phase half wave)
0.5�
160�
150�
140�
130�
120�
Per one erement
2
0.4�
0.3�
360。�
Junction to case
Per one element
: Conduction Angle
0.2�
110�
100�
0.1�
0�
θ=60゜�
θ=120゜�
D.C.
θ=30゜� θ=90゜�θ=180゜�
0�
ー
ー
ー
1�
103�2� 5�102�2� 5�101� 2� 5�100� 2� 5�10
0�
50�
100�
150�
Time t(sec)�
Average On-State Curren(t A)�
Surge On-State Current Rating�
On-State Voltage max
(Non-Repetitive)�
3000�
2�
Per one element
Tj=25℃�
3�
10
2500�
2000�
5�
2�
60Hz
2�
10
1500�
5�
1000�
0�
2�
1�
10
�
�
0�
0.5�
1�
1.5�
2�
2.5�
3�
�
1�
50� 100
2�
5�
10
20�
On-State Voltage(V)�
Time(cycles)�
Average On-State Current Vs Power Dissipation�
(Single phase half wave)
Gate Characteristics
2�
150�
D.C.
Peak Forward Gate Voltage(10V)�
Per one erement
1�
10
5�
θ=180゜�
θ=120゜�
θ=90゜�
θ=60゜�
100�
2�
0�
10
25℃�
θ=30゜�
2
150℃�
–30℃�
50�
5�
2�
360。�
: Conduction Angle
Maximum Gate Voltage that will not terigger any unit
0�
�
1�
2�
3�
10
2�
5� 10
2�
5� 10
2�
5�
0
50�
100�
150�
Gate Curren(t mA)�
Average On-State Curren(t A)�
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