3TA80GKXXNB-B
Three Phase Thyristor Module (Half Bridge)
Average On-State Current Vs Maximum Allowable�
Transient Thermal Impedance
Case Temperature（Single phase half wave）
０．５�
１６０�
１５０�
１４０�
１３０�
１２０�
Per one erement
2
０．４�
０．３�
360。�
Junction to case
Per one element
: Conduction Angle
０．２�
１１０�
１００�
０．１�
０�
θ＝60゜�
θ＝120゜�
D.C.
θ＝30゜� θ＝90゜�θ＝180゜�
０�
ー
ー
ー
１�
１０３�２� ５�１０２�２� ５�１０１� ２� ５�１００� ２� ５�１０
０�
５０�
１００�
１５０�
Time t（sec）�
Average On-State Curren（t A）�
Surge On-State Current Rating�
On-State Voltage max
（Non-Repetitive）�
３０００�
２�
Per one element
Tj＝25℃�
３�
１０
２５００�
２０００�
５�
２�
60Hz
２�
１０
１５００�
５�
１０００�
０�
２�
１�
１０
�
�
０�
0．５�
１�
１．５�
２�
２．５�
３�
�
１�
５０� １００
２�
５�
１０
２０�
On-State Voltage（V）�
Time（cycles）�
Average On-State Current Vs Power Dissipation�
（Single phase half wave）
Gate Characteristics
２�
１５０�
D.C.
Peak Forward Gate Voltage（10V）�
Per one erement
１�
１０
５�
θ＝180゜�
θ＝120゜�
θ＝90゜�
θ＝60゜�
１００�
２�
０�
１０
25℃�
θ＝30゜�
2
150℃�
–30℃�
５０�
５�
２�
360。�
: Conduction Angle
Maximum Gate Voltage that will not terigger any unit
０�
�
１�
２�
３�
１０
２�
５� １０
２�
５� １０
２�
５�
０
５０�
１００�
１５０�
Gate Curren（t mA）�
Average On-State Curren（t A）�
www.sirectifier.com
P3
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
