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3TA60GK03NB-B 参数 Datasheet PDF下载

3TA60GK03NB-B图片预览
型号: 3TA60GK03NB-B
PDF下载: 下载PDF文件 查看货源
内容描述: [Three Phase Thyristor Module (Half Bridge)]
分类和应用:
文件页数/大小: 3 页 / 1859 K
品牌: SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
 浏览型号3TA60GK03NB-B的Datasheet PDF文件第1页浏览型号3TA60GK03NB-B的Datasheet PDF文件第2页  
3TA60GKXXNB-B  
Three Phase Thyristor Module (Half Bridge)  
Average On-State Current Vs Maximum Allowable�  
Transient Thermal Impedance  
5�  
Case Temperature(Single phase half wave)  
17�  
16�  
15�  
14�  
2
4�  
3�  
2�  
1�  
Per one erement  
Junction to case  
360。�  
: Conduction Angle  
13�  
12�  
11�  
10�  
0�  
Per one element  
θ=120゜�  
θ=60゜�  
0�  
θ=180゜�  
θ=30゜�  
θ=90゜�  
D.C.  
� 5� � 5� 5�  
0�  
�  
�  
�  
�  
10�  
12�  
Time t(sec�  
Average On-State Current A�  
Surge On-State Current Rating�  
On-State Voltage max  
(Non-Repetitive�  
2�  
200�  
150�  
100�  
3
Per one element  
Tj=25℃�  
10  
5�  
2�  
2
60Hz  
10  
5�  
2�  
1�  
10  
0�  
.5�  
.0�  
1.5�  
.0�  
.5�  
.0�  
1�  
2�  
5�  
10  
�  
�  
On-State Voltage(V�  
Time(cycles�  
Average On-State Current Vs Power Dissipation�  
12�  
(Single phase half wave)  
Gate Characteristics  
2�  
D.C.  
Per one erement  
Peak Forward Gate Voltage(10V�  
1�  
10  
10�  
�  
�  
�  
5�  
θ=180゜�  
θ=120゜�  
θ=90゜�  
θ=60゜�  
2�  
25℃�  
0�  
10  
θ=30゜�  
2
5�  
150℃�  
Maximum Gate Voltage that will not terigger any unit  
30℃�  
360。�  
�  
: Conduction Angle  
2�  
�  
1�  
2�  
3�  
0� �  
10  
2�  
5� 0  
2�  
5� 0  
2�  
5�  
Average On-State Current A�  
Gate Current mA�  
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