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3TA150GK06NB 参数 Datasheet PDF下载

3TA150GK06NB图片预览
型号: 3TA150GK06NB
PDF下载: 下载PDF文件 查看货源
内容描述: [Three Phase Thyristor Module (Half Bridge)]
分类和应用:
文件页数/大小: 3 页 / 1457 K
品牌: SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
 浏览型号3TA150GK06NB的Datasheet PDF文件第1页浏览型号3TA150GK06NB的Datasheet PDF文件第2页  
3TA150GKXXNB  
Three Phase Thyristor Module (Half Bridge)  
Transient Thermal Impedance  
Case Temperature(Single phase half wave)  
3�  
16  
15  
14  
13  
12  
11  
10  
Per one element  
Junction to Case  
2
2�  
1�  
0�  
Per one element  
360  
θ: Conduction Angle  
D.C.  
ー3�  
ー1�  
1�  
10  5�� 5� 5�� 5�0  
240  
10 12 14 16 18 20 220  
Time t(sec�  
Average On-State Current(A)  
Surge On-State Current Rating�  
On-State Voltage max  
(Non-Repetitive�  
5�  
350�  
2�  
Per one element  
Tj=25℃�  
300�  
3�  
10  
5�  
250�  
200�  
Tj=150℃�  
Maximum�  
60Hz  
2�  
2�  
10  
5�  
2�  
10  
150�  
0�  
1�  
5�  
0�  
5�  
0�  
5�  
0�  
5�  
0�  
1�  
2�  
5�  
�  
�  
�  
On-State Voltage(V�  
Time(cycles�  
Gate Characteristics  
(Single phase half wave)  
2�  
25  
Peak Forward Gate Voltag(10V�  
Peak Forward Gate Voltag(10V�  
D.C.  
10  
20  
15  
10  
5�  
2�  
150℃� 25℃�  
-30℃�  
10  
Per one element  
2
5�  
2�  
360  
Maximum Gate Voltage that will not terigger any unit  
: Conduction Angle  
2�  
3�  
10  
2�  
5� 0  
2�  
5� 0  
2�  
5�  
10  
Average On-State Current(A)  
20  
Gate Current mA�  
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