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3TA100GKXXNB-B 参数 Datasheet PDF下载

3TA100GKXXNB-B图片预览
型号: 3TA100GKXXNB-B
PDF下载: 下载PDF文件 查看货源
内容描述: [Three Phase Thyristor Module (Half Bridge)]
分类和应用:
文件页数/大小: 3 页 / 1435 K
品牌: SIRECTIFIER [ SIRECTIFIER SEMICONDUCTORS ]
 浏览型号3TA100GKXXNB-B的Datasheet PDF文件第1页浏览型号3TA100GKXXNB-B的Datasheet PDF文件第2页  
3TA100GKXXNB  
Three Phase Thyristor Module (Half Bridge)  
Average On-State Current Vs Maximum Allowable�  
Transient Thermal Impedance  
Case Temperature(Single phase half wave)  
5�  
16�  
15�  
14�  
13�  
12�  
11�  
10�  
�  
Per one elememt  
Per one element  
4�  
3�  
2
Junction to case  
360。�  
θ: Conduction Angle  
2�  
1�  
0�  
θ180゜�  
θ= 3 0 ゜ �  
θ= 6 0 ゜ �  
θ= 3 0 ゜ �  
θ= 9 0 ゜ �  
θ120゜�  
D.C.  
1�  
� 5�� 5� 5�� 5�0  
0�  1214161820�  
Time t(sec�  
Average On-State Current A�  
Surge On-State Current Rating�  
On-State Voltage max  
(Non-Repetitive�  
5�  
350�  
2�  
Per one element  
Tj=25℃�  
300�  
250�  
200�  
150�  
3�  
10  
5�  
60Hz  
2�  
2�  
10  
5�  
1�  
10  
2�  
0�  
0�  
1�  
0�  
1�  
5�  
2�  
5�  
3�  
2�  
5�  
�  
�  
�  
On-State Voltage(V�  
Time(cycles�  
Average On-State Current Vs Power Dissipation�  
(Single phase half wave)  
Gate Characteristics  
2�  
25�  
Peak Forward Gate Voltage(10V�  
1�  
D.C.  
10  
20�  
15�  
10�  
�  
5�  
θ180゜�  
θ120゜�  
θ= 9 0 ゜ �  
θ= 6 0 ゜ �  
2�  
25℃�  
0�  
10  
Per one element  
θ30゜�  
150℃�  
30℃�  
5�  
2
360。�  
2�  
Maximum Gate Voltage that will not terigger any unit  
: Conduction Angle  
1�  
10  
0�  
1�  
2�  
3�  
10  
2�  
5� 0  
2�  
5� 0  
2�  
5�  
�  
10�  
15�  
20�  
25�  
Gate Current mA�  
Average On-State Current A�  
P3  
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