3TA100GKXXNB
Three Phase Thyristor Module (Half Bridge)
Average On-State Current Vs Maximum Allowable�
Transient Thermal Impedance
Case Temperature(Single phase half wave)
0.5�
160�
150�
140�
130�
120�
110�
100�
90�
Per one elememt
Per one element
0.4�
0.3�
2
Junction to case
360。�
θ: Conduction Angle
0.2�
0.1�
0�
θ=180゜�
θ= 3 0 ゜ �
θ= 6 0 ゜ �
θ= 3 0 ゜ �
θ= 9 0 ゜ �
θ=120゜�
D.C.
DD..CC..
ー
ー
ー
1�
103�2� 5�102� 2� 5�101� 2� 5�100� 2� 5�10
0� 20� 40�60� 80�100�120�140�160�180�200�220�
Time t(sec)�
Average On-State Curren(t A)�
Surge On-State Current Rating�
On-State Voltage max
�
(Non-Repetitive)�
5�
3500�
2�
Per one element
Tj=25℃�
3000�
2500�
2000�
1500�
3�
10
5�
60Hz
2�
2�
10
5�
1�
10
2�
0�
0�
1�
0.5�
1�
1.5�
2�
2.5�
3�
2�
5�
10�
20�
50� 100�
On-State Voltage(V)�
Time(cycles)�
Average On-State Current Vs Power Dissipation�
(Single phase half wave)
Gate Characteristics
2�
250�
Peak Forward Gate Voltage(10V)�
1�
D.C.
10
200�
150�
100�
50�
5�
θ=180゜�
θ=120゜�
θ= 9 0 ゜ �
θ= 6 0 ゜ �
2�
�
25℃�
0�
10
Per one element
θ=30゜�
150℃�
–30℃�
5�
2
360。�
2�
Maximum Gate Voltage that will not terigger any unit
: Conduction Angle
1�
10
0�
�
1�
2�
3�
10
2�
5� 10
2�
5� 10
2�
5�
0
50�
100�
150�
200�
250�
Gate Curren(t mA)�
Average On-State Curren(t A)�
P3
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