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BTB15 参数 Datasheet PDF下载

BTB15图片预览
型号: BTB15
PDF下载: 下载PDF文件 查看货源
内容描述: 离散双向可控硅(非隔离/隔离) [Discrete Triacs(Non-Isolated/Isolated)]
分类和应用: 可控硅
文件页数/大小: 4 页 / 267 K
品牌: SIRECT [ Sirectifier Global Corp. ]
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BTB/BTA15
Discrete Triacs(Non-Isolated/Isolated)
F ig. 6: Non-repetitive s urge peak on-s tate
current for a s inus oida l puls e with width
tp < 10ms, a nd corres ponding value of I²t.
IT S M (A ), I² t (A ² s )
3000
T j initial=25°C
dI/dt limitation:
50A /µ
s
F ig. 7: R elative va riation of gate trigger current,
holding current and la tching current versus
junction temperature (typical va lues ).
IG T,IH,IL [T j] / IG T,IH,IL [T j=25° C ]
2.5
2.0
IG T
1000
1.5
IT S M
1.0
0.5
IH & IL
tp (ms )
100
0.01
0.10
1.00
I²t
T j(° C )
10.00
0.0
-40
-20
0
20
40
60
80
100
120
140
F ig. 8:
R elative variation of critical rate of
decreas e of main current vers us (dV /dt)c (typica l
values ).
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
1.0
(dV /dt)c (V /µ )
s
10.0
100.0
B
C
SW
F ig. 9: R elative variation of critical rate of
decreas e of main current vers us junction
temperature.
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
6
5
4
B W/C W/T 1635
3
2
1
0
0
25
50
T j (° C )
75
100
125