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L
E
C
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BAV16BPT
Fast Switching Diode Array – 150mAmp 75Volt
□
Features
-For surface mounted applications
-Low profile package
-Built-in strain relief
-Metal silicon junction, majority carrier conduction
-Low power loss, high efficiency
-High current capability, low forward voltage drop
-For use in low voltage high frequency inverters, free wheeling and polarity
protection application
-High temperature soldering guaranteed
-High reliability
-High surge current capability
-Lead free device
-ESD sensitive product handling required
SOD-123
.028(0.70)
.018(0.45)
.071(1.80)
.055(1.40)
.112(2.85)
.100(2.55)
.008(0.2)
.053(1.35)
.035(0.90)
□
Mechanical data
-Case：Molded plastic
-Polarity：Color band denotes cathode end
.020(0.50)
.004(0.12)
.153(3.90)
.140(3.55)
□
Maximum ratings and Electrical characteristics
TYPE
Maximum Non-Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum Repetitive Peak Reverse and DC Blocking Voltage
Maximum Average Forward Rectified Current
Non-Repetitive Peak Forward urge Current
@ t = 1.0uSec
@t = 1.0Sec
@ I
F
= 1.0mA
@ I
F
= 10mA
@ I
F
= 50mA
@ I
F
= 150mA
@T
J
= 25ºC
@T
J
= 150ºC
SYMBOL
V
RM
V
RMS
V
RRM ,
V
DC
I
O
I
FSM
BAV16BPT
100
53
75
150
2.0
1.0
0.715
0.855
1.00
1.25
1.0
50
2.0
4.0
625
-65 - 150
UNIT
V
V
V
mA
A
Maximum Instantaneous Forward Voltage
V
F
V
Maximum Average Reverse Current
I
R
C
J
T
RR
R
θJA
T
J ,
T
STG
μA
pF
nSec
ºC/W
ºC
August 2007 / Rev.5
Typical Junction Capacitance (Note 1)
Maximum Reverse Recovery Time (Note 2)
Thermal Resistance Junction to Ambient (Note 3)
Maximum Storage and Operating Temperature Range
Note:
.1.Measured
at 1.0 MHz and applied reverse voltage of 0 volts
2.Measured at applied forward current of 10mA and reverse current of 10mA
3.Device mounted on FR-4 by 1 inch x 0.85 inch x 0.062 inch
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1
SIRECT [ Sirectifier Global Corp. ]
