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U637256DC70G1 参数 Datasheet PDF下载

U637256DC70G1图片预览
型号: U637256DC70G1
PDF下载: 下载PDF文件 查看货源
内容描述: CapStore 32K ×8的nvSRAM [CapStore 32K x 8 nvSRAM]
分类和应用: 静态存储器
文件页数/大小: 14 页 / 255 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
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U637256  
Device Operation  
In order to prevent unneeded STORE operations, auto-  
matic STORE will be ignored unless at least one  
WRITE operation has taken place since the most  
recent STORE or RECALL cycle. Software initiated  
STORE cycles are performed regardless of whether or  
not a WRITE operation has taken place.  
SRAM READ and WRITE operations that are in pro-  
gress after an automatic STORE cycle on power down  
is requested are given time to complete before the  
STORE operation is initiated.  
During tDELAY multiple SRAM READ operations may  
take place. If a WRITE is in progress it will be allowed a  
time, tDELAY, to complete. Any SRAM WRITE cycles  
requested after the VCC pin drops below VSWITCH will be  
inhibited.  
The U637256 has two separate modes of operation:  
SRAM mode and nonvolatile mode. The memory ope-  
rates in SRAM mode as a standard static RAM.  
Data is transferred in nonvolatile mode from SRAM to  
EEPROM (the STORE operation) or from EEPROM to  
SRAM (the RECALL operation). In this mode SRAM  
functions are disabled.  
STORE cycles may be initiated under user control via a  
software sequence and are also automatically initiated  
when the power supply voltage level of the chip falls  
below VSWITCH. RECALL operations are automatically  
initiated upon power up and may also occur when the  
VCC rises above VSWITCH, after a low power condition.  
RECALL cycles may also be initiated by a software  
sequence.  
Automatic RECALL  
SRAM READ  
During power up, an automatic RECALL takes place. At  
a low power condition (power supply voltage < VSWITCH  
)
The U637256 performs a READ cycle whenever E and  
G are LOW and W is HIGH. The address specified on  
pins A0 - A14 determines which of the 32768 data  
bytes will be accessed. When the READ is initiated by  
an address transition, the outputs will be valid after a  
delay of tcR. If the READ is initiated by E or G, the out-  
puts will be valid at ta(E) or at ta(G), whichever is later.  
The data outputs will repeatedly respond to address  
changes within the tcR access time without the need for  
transition on any control input pins, and will remain  
valid until another address change or until E or G is  
brought HIGH or W is brought LOW.  
an internal RECALL request may be latched. As soon  
as power supply voltage exceeds the sense voltage of  
V
SWITCH, a requested RECALL cycle will automatically  
be initiated and will take tRESTORE to complete.  
If the U637256 is in a WRITE state at the end of power  
up RECALL, the SRAM data will be corrupted.  
To help avoid this situation, a 10 kΩ resistor should be  
connected between W and power supply voltage.  
Software Nonvolatile STORE  
The U637256 software controlled STORE cycle is  
initiated by executing sequential READ cycles from six  
specific address locations. By relying on READ cycles  
only, the U637256 implements nonvolatile operation  
while remaining compatible with standard 32K x 8  
SRAMs. During the STORE cycle, an erase of the pre-  
vious nonvolatile data is performed first, followed by a  
parallel programming of all the nonvolatile elements.  
Once a STORE cycle is initiated, further inputs and out-  
puts are disabled until the cycle is completed.  
SRAM WRITE  
A WRITE cycle is performed whenever E and W are  
LOW. The address inputs must be stable prior to  
entering the WRITE cycle and must remain stable until  
either E or W goes HIGH at the end of the cycle. The  
data on pins DQ0 - 7 will be written into the memory if it  
is valid tsu(D) before the end of a W controlled WRITE or  
t
su(D) before the end of an E controlled WRITE.  
Because a sequence of addresses is used for STORE  
initiation, it is important that no other READ or WRITE  
accesses intervene in the sequence or the sequence  
will be aborted.  
To initiate the STORE cycle the following READ  
sequence must be performed:  
It is recommended that G is kept HIGH during the  
entire WRITE cycle to avoid data bus contention on the  
common I/O lines. If G is left LOW, internal circuitry will  
turn off the output buffers tdis (W) after W goes LOW.  
Automatic STORE  
1.  
2.  
3.  
4.  
5.  
6.  
Read addresses 0E38 (hex) Valid READ  
Read addresses 31C7 (hex) Valid READ  
Read addresses 03E0 (hex) Valid READ  
Read addresses 3C1F (hex) Valid READ  
Read addresses 303F (hex) Valid READ  
Read addresses 0FC0 (hex) Initiate STORE  
Cycle  
During normal operation, the U637256 will draw current  
from VCC to charge up an integrated capacitor. This  
stored charge will be used by the chip to perform a sin-  
gle STORE operation. If the voltage on the VCC pin  
drops below VSWITCH, the part will automatically discon-  
nect the internal components from the external power  
supply with a typical delay of 150 ns and initiate a  
STORE operation with tPDSTORE max. 10 ms.  
August 15, 2006  
STK Control #ML0054  
11  
Rev 1.1  
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