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STK14D88-RF45ITR 参数 Datasheet PDF下载

STK14D88-RF45ITR图片预览
型号: STK14D88-RF45ITR
PDF下载: 下载PDF文件 查看货源
内容描述: 32Kx8自动存储的nvSRAM [32Kx8 Autostore nvSRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 19 页 / 398 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
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STK14D88  
has taken place. The HSB signal can be monitored  
by the system to detect an AutoStore cycle is in  
progress.  
To initiate the software STORE cycle, the following  
READ sequence must be performed:  
1 Read Address 0x0E38 Valid READ  
2 Read Address 0x31C7 Valid READ  
3 Read Address 0x03E0 Valid READ  
4 Read Address 0x3C1F Valid READ  
5 Read Address 0x303F Valid READ  
6 Read Address 0x0FC0 Initiate STORE Cycle  
HARDWARE STORE (HSB) OPERATION  
The STK14D88 provides the HSB pin for controlling  
and acknowledging the STORE operations. The  
HSB pin can be used to request a hardware STORE  
cycle. When the HSB pin is driven low, the  
STK14D88 will conditionally initiate a STORE oper-  
ation after t  
. An actual STORE cycle will only  
Once the sixth address in the sequence has been  
entered, the STORE cycle will commence and the  
chip will be disabled. It is important that READ  
cycles and not WRITE cycles be used in the  
DELAY  
begin if a WRITE to the SRAM took place since the  
last STORE or RECALL cycle. The HSB pin also  
acts as an open drain driver that is internally driven  
low to indicate a busy condition while the STORE  
(initiated by any means) is in progress. This pin  
should be externally pulled up if it is used to drive  
other inputs.  
sequence. After the t  
cycle time has been ful-  
STORE  
filled, the SRAM will again be activated for READ  
and WRITE operation.  
SOFTWARE RECALL  
SRAM READ and WRITE operations that are in  
progress when HSB is driven low by any means are  
given time to complete before the STORE operation  
is initiated. After HSB goes low, the STK14D88 will  
Data can be transferred from the nonvolatile mem-  
ory to the SRAM by a software address sequence. A  
software RECALL cycle is initiated with a sequence  
of READ operations in a manner similar to the soft-  
ware STORE initiation. To initiate the RECALL  
cycle, the following sequence of E controlled READ  
operations must be performed:  
continue SRAM operations for t  
. During t  
,
DELAY  
DELAY  
multiple SRAM READ operations may take place. If  
a WRITE is in progress when HSB is pulled low, it  
will be allowed a time, t  
, to complete. However,  
DELAY  
any SRAM WRITE cycles requested after HSB goes  
low will be inhibited until HSB returns high.  
1 Read Address 0x0E38 Valid READ  
2 Read Address 0x31C7 Valid READ  
3 Read Address 0x03E0 Valid READ  
4 Read Address 0x3C1F Valid READ  
5 Read Address 0x303F Valid READ  
6 Read Address 0x0C63 Initiate RECALL Cycle  
If HSB is not used, it should be left unconnected.  
HARDWARE RECALL (POWER-UP)  
During power up or after any low-power condition  
(V <V  
), an internal RECALL request will be  
CC  
SWITCH  
latched. When V  
once again exceeds the sense  
, a RECALL cycle will automati-  
CC  
Internally, RECALL is a two-step procedure. First,  
the SRAM data is cleared, and second, the nonvola-  
tile information is transferred into the SRAM cells.  
voltage of V  
SWITCH  
cally be initiated and will take t  
to complete.  
HRECALL  
After the t  
cycle time, the SRAM will once  
RECALL  
SOFTWARE STORE  
again be ready for READ or WRITE operations. The  
RECALL operation in no way alters the data in the  
nonvolatile storage elements.  
Data can be transferred from the SRAM to the non-  
volatile memory by a software address sequence.  
The STK14D88 software STORE cycle is initiated  
by executing sequential E controlled READ cycles  
from six specific address locations in exact order.  
During the STORE cycle, previous data is erased  
and then the new data is programmed into the non-  
volatile elements. Once a STORE cycle is initiated,  
further memory inputs and outputs are disabled until  
the cycle is completed.  
Rev 1.7  
Document Control #ML0033  
February 2007  
12  
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