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5962-9305605MYC 参数 Datasheet PDF下载

5962-9305605MYC图片预览
型号: 5962-9305605MYC
PDF下载: 下载PDF文件 查看货源
内容描述: [Non-Volatile SRAM, 8KX8, 45ns, CMOS, CQCC28, CERAMIC, LCC-28]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 10 页 / 75 K
品牌: SIMTEK [ SIMTEK CORPORATION ]
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STK10C68-M  
RECALL CYCLES #1, #2 & #3  
(VCC = 5.0V ± 10%)  
SYMBOLS  
NO.  
PARAMETER  
MIN  
MAX  
UNITS  
#1  
#2  
#3  
r
29  
30  
31  
32  
33  
34  
35  
t
t
t
t
t
RECALL Cycle Time  
RECALL Initiation Cycle Time  
NE Set-up  
25  
µs  
ns  
ns  
ns  
ns  
ns  
ns  
NLQX  
ELQXR  
ELNHR  
GLQXR  
s
t
35  
0
NLNH  
GLNH  
t
t
NLEL  
NLGL  
t
t
Output Enable Set-up  
Write Enable Set-up  
Chip Enable Set-up  
NE Fall to Outputs Inactive  
0
GLNL  
GLEL  
t
t
t
WHGL  
0
WHNL  
WHEL  
t
t
0
ELNL  
ELGL  
t
35  
NLQZ  
Note r: Measured with W and NE both high, and G and E low.  
Note s: Once t has been satisfied by NE, G, W and E, theRECALL cycle is completed automatically. Any of NE, G or E may be used to terminate the  
NLNH  
RECALL initiation cycle.  
Note t: If W is low at any point in which both E and NE are low and G is high, then a STORE cycle will be initiated instead of a RECALL.  
o
RECALL CYCLE #1: NE CONTROLLED  
30  
NE  
t
NLNH  
32  
GLNL  
t
G
W
E
33  
WHNL  
t
34  
ELNL  
29  
t
t
NLQX  
35  
NLQZ  
t
HIGH IMPEDANCE  
DQ (Data Out)  
o
RECALL CYCLE #2: E CONTROLLED  
31  
NLEL  
t
NE  
32  
t
G
GLEL  
t
33  
WHEL  
W
E
30  
ELNHR  
t
29  
ELQXR  
t
HIGH IMPEDANCE  
DQ (Data Out)  
o,t  
RECALL CYCLE #3: G CONTROLLED  
31  
t
NLGL  
NE  
G
30  
t
GLNH  
33  
WHGL  
t
W
E
34  
ELGL  
t
29  
GLQXR  
t
HIGH IMPEDANCE  
DQ (Data Out)  
4-17