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SLSD-71N8 参数 Datasheet PDF下载

SLSD-71N8图片预览
型号: SLSD-71N8
PDF下载: 下载PDF文件 查看货源
内容描述: 可焊平面光电二极管 [Solderable Planar Photodiode]
分类和应用: 光电二极管光电二极管
文件页数/大小: 1 页 / 28 K
品牌: SILONEX [ SILONEX INC. ]
   
SLSD-71N8
SLSD-71N8 / #
Solderable Planar Photodiode
Features
Visible to IR spectral irradiance range
High reliability
Oxide passivation
Linear short circuit current
Low capacitance, high speed
Protective coating
Available in arrays where # indicates number of
elements ( maximum of 8 elements )
0.8
3.4
1.3
#32 AWG Wire
Sensitive Area
(2.7 sq. mm.)
Dimensions in mm.
-Blk
(Cathode)
150 nom
4.8
Nom.
+Red
(Anode)
Description
The Silonex series of silicon solderable planar
photodiodes feature low cost, high reliability, and
linear short circuit current over a wide range of
illumination. These devices are widely used for light
sensing and power generation because of their
stability and high efficiency. They are particularly
suited to power conversion applications due to their
low internal impedance and relatively high shunt
impedance, stability, and humidity characteristics.
These devices also provide a reliable, inexpensive
detector for applications such as light beam sensing
and instrumentation. The electrical characteristics
below are per element. In the multielement arrays
the cathodes are common to a single cathode wire.
Also available without leads as part number SLCD-61N8
Directional Sensitivity Characteristics
40°
50°
30°
20°
10°
1.0
0.8
Half Angle = 60°
60°
0.6
0.4
70°
80°
90°
100°
1.0
0.8
0.6
0.4
0.2
0.0
20°
40°
60°
80°
100°
120°
Absolute Maximum Ratings
Storage Temperature
Operating Temperature
-40°C to +105°C
-40°C to +105°C
Min
100
Typ
170
0.40
100
0.55
20
930
400
60
Units
Test Conditions
2
V
R
=0V, Ee=25mW/cm (1)
µA
2
V
Ee=25mw/cm (1)
1.7
V
R
=5V, Ee=0
µA
pF
V
R
=0V, Ee=0, f=1MHz
A/W
λ=940nm
V
I
R
=100µA
nm
1100
nm
deg
Specifications subject to change without notice
103193 REV 2
Electrical Characteristics
(T
A
=25°C unless otherwise noted)
Symbol
Parameter
I
SC
Short Circuit Current
V
OC
Open Circuit Voltage
I
D
Reverse Dark Current
C
J
Junction Capacitance
Spectral Sensitivity
S
λ
V
BR
Reverse Breakdown Voltage
Maximum Sensitivity Wavelength
λ
P
Sensitivity Spectral Range
λ
R
Acceptance Half Angle
θ
1/2
Notes: (1) Ee = light source @ 2854
°K
Max
5200 St. Patrick St., Montreal
Que., H4E 4N9, Canada
Tel: 514-768-8000
Fax: 514-768-8889
QF-84
The Old Railway, Princes Street
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 01 229 581 551
Fax: 01 229 581 554