SLD-70C2
Planar Photodiode
Features
•
Planar photodiode
•
Low capacitance
•
Fast switching time
•
Low leakage current
•
Linear response vs irradiance
•
Multiple dark current ranges available
Description
The planar photodiode is designed to operate in either
photoconductive or photovoltaic modes. High sensitivity
and low dark current allow use in even low irradiance
applications. The photodiode is supplied on a ceramic
base with a clear epoxy dome package.
Absolute Maximum Ratings
Storage Temperature
Operating Temperature
Soldering Temperature (3)
1.9
Optical
Clear Epoxy
38 nom.
Red dot
Anode
7.2
5.1
6.3
3.4
max.
Chip Size = 3.6 mm X 3.6 mm
Active Area = 9.8 sq.mm.
0.50 - 0.52
Cathode
Dimensions in mm.(+/- 0.2)
Directional Sensitivity Characteristics
-20°C to +75°C
-20°C to +75°C
260°C
40°
50°
30°
20°
10°
1.0
0.8
0.6
0.4
0.2
0.0
Half Angle = 60°
Notes: (1) Ee = source @ 2854°K.
(2) Ee = source @
λ
= 880 nm
(3) >2 mm from case for < 5 sec.
60°
70°
80°
90°
100°
1.0
0.8
0.6
0.4
20°
40°
60°
80°
100° 120°
Electrical Characteristics
(T
A
=25°C unless otherwise noted)
Symbol
Parameter
MIN
TYP
I
SC
Short Circuit Current
450
700
V
OC
Open Circuit Voltage
0.40
I
D
Reverse Dark Current:
SLD-70C2A
SLD-70C2B
SLD-70C2C
SLD-70C2D
SLD-70C2E
C
J
Junction Capacitance
180
t
R
Rise Time
4
t
F
Fall Time
6
TC
I
Temp. Coef., I
SC
+0.2
V
BR
Reverse Breakdown Voltage
50
Maximum Sensitivity Wavelength
930
λ
P
Sensitivity Spectral Range
400
λ
R
Acceptance Half Angle
60
θ
1/2
Specifications subject to change without notice.
MAX
UNITS
TEST CONDITIONS
V
R
=0V, Ee=25mW/cm
2
(1)
µA
V
Ee=25mw/cm
2
(1)
nA
nA
nA
nA
nA
pF
µs
µs
%/°C
V
nm
nm
deg
V
R
=100mV, Ee=0
V
R
=5V, Ee=0
V
R
=5V, Ee=0
V
R
=5V, Ee=0
V
R
=5V, Ee=0
V
R
=0, Ee=0, f=1MHz
V
R
=5V, R
L
=1kΩ (2)
V
R
=5V, R
L
=1kΩ (2)
(1)
I
R
=100µA
100
100
20
5
1
1100
(off center-line)
101407 REV 4
5200 St. Patrick St., Montreal
Que., H4E 4N9, Canada
Tel: 514-768-8000
Fax: 514-768-8889
QF-84
The Old Railway, Princes Street
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 01 229 581 551
Fax: 01 229 581 554