SLD-68EBG1
Integral Infrared Rejection Filter
Planar Photodiode
Features
•
Planar Photodiode
•
Integral IR Rejection Filter
•
Low capacitance
•
Fast switching time
•
Low leakage current
•
Linear response vs irradiance
•
TO-46 base with epoxy dome lens
•
Multiple dark current ranges available
Description
This planar, passivated silicon photodiode is designed
to maximize response in the visible light spectrum of
received energy. This diode incorporates a BG filter
that rejects infrared wavelengths and approximates
the response of the human eye. Photodiodes may
operate in either photovoltaic or reverse bias mode to
provide low capacitance with fast switching speed. It
provides excellent linearity in output signal versus
light intensity.
Absolute Maximum Ratings
Storage Temperature
Operating Temperature
Soldering Temperature (3)
45°
ø 5.3
25.4 Min.
3.0
4.2
0.50-0.52
Epoxy
2.5
Filter
Chip
Anode +
Cathode -
(Common to case)
Dimensions in mm. (+/- 0.13)
Chip Size = 1.7 mm X 1.7 mm
Active Area = 2.0 sq.mm.
Directional Sensitivity Characteristics
40°
50°
30°
20°
10°
1.0
0.8
0.6
0.4
0.2
0.0
Half Angle = 40°
60°
70°
-20°C to +75°C
-20°C to +75°C
260°C
80°
90°
100°
1.0
0.8
0.6
0.4
20°
40°
60°
80°
100°
120°
Electrical Characteristics
(T
A
=25°C unless otherwise noted)
Symbol
Parameter
MIN
TYP
I
SC
Short Circuit Current
7.5
11.0
V
OC
Open Circuit Voltage
0.40
I
D
Reverse Dark Current:
SLD-68EBG1A
SLD-68EBG1B
SLD-68EBG1C
SLD-68EBG1D
SLD-68EBG1E
C
J
Junction Capacitance
40
t
R
Rise Time
1.0
t
F
Fall Time
1.5
TC
I
Temp. Coef., I
SC
+0.2
V
BR
Reverse Breakdown Voltage
50
Maximum Sensitivity Wavelength
550
λ
P
Sensitivity Spectral Range
400
λ
R
Acceptance Half Angle
40
θ
1/2
Notes: (1) Ee = light source @ 2854
°K
(2) Ee = Light source @
λ
= 580 nm
(3) >2 mm from case for <5 sec.
5200 St. Patrick St., Montreal
Que., H4E 4N9, Canada
Tel: 514-768-8000
Fax: 514-768-8889
QF-84
MAX
UNITS
TEST CONDITIONS
2
V
R
=0V, Ee=25mW/cm (1)
µA
2
V
Ee=25mW/cm (1)
nA
V
R
=100mV, Ee=0
nA
V
R
=5V, Ee=0
nA
V
R
=5V, Ee=0
nA
V
R
=5V, Ee=0
pA
V
R
=5V, Ee=0
pF
V
R
=0, Ee=0, f=1MHz
µs
V
R
=10V, R
L
=1kΩ (2)
µs
V
R
=10V, R
L
=1kΩ (2)
%/°C (1)
V
I
R
=100µA
nm
700
nm
deg (off center-line)
Specifications subject to change without notice
102647 REV 2
100
100
10
1
250
The Old Railway, Princes Street
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 01 229 581 551
Fax: 01 229 581 554
SILONEX [ SILONEX INC. ]
