SSF8822
DESCRIPTION
The SSF8822 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a uni-directional or bi-directional load switch,
facilitated by its common-drain configuration.
G1
D1
D2
G2
S1
S2
Marking and pin Assignment
GENERAL FEATURES
●
V
DS
= 20V,I
D
= 7A
R
DS(ON)
< 21mΩ @ V
GS
=10V
R
DS(ON)
< 24mΩ @ V
GS
=4.5V
R
DS(ON)
< 28mΩ @ V
GS
=3.6V
R
DS(ON)
< 32mΩ @ V
GS
=2.5V
R
DS(ON)
< 50mΩ @ V
GS
=1.8V
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Schematic diagram
Application
●Battery
protection
●Load
switch
●Power
management
TSSOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
SSF8822
Device
SSF8822
Device Package
TSSOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Limit
20
±12
7
30
1.5
-55 To 150
Unit
V
V
A
A
W
℃
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
83
℃
/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BV
DSS
I
DSS
I
GSS
V
GS
=0V I
D
=250μA
V
DS
=16V,V
GS
=0V
V
GS
=±10V,V
DS
=0V
Min
20
Typ
Max
Unit
V
1
±100
μA
nA
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.0
SILIKRON [ SILIKRON SEMICONDUCTOR CO.,LTD. ]
