SSF6816
DESCRIPTION
The SSF6816 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected.
This device is suitable for use as a uni-directional
or bi-directional load switch, facilitated by its
common-drain configuration.
Schematic diagram
GENERAL FEATURES
●
V
DS
= 30V,I
D
= 8A
R
DS(ON)
< 30mΩ @ V
GS
=2.5V
R
DS(ON)
< 24mΩ @ V
GS
=3.1V
R
DS(ON)
< 22mΩ @ V
GS
=4.0V
R
DS(ON)
< 20mΩ @ V
GS
=4.5V
R
DS(ON)
< 17mΩ @ V
GS
=10V
ESD Rating：2000V HBM
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
DFN2×5-6L top view
Marking and pin Assignment
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
6816
Device
SSF6816
Device Package
DFN2×5-6L
Reel Size
Tape width
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Limit
30
±12
8
45
1.7
-55 To 150
Unit
V
V
A
A
W
℃
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
40
℃
/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=30V,V
GS
=0V
Min
30
Typ
Max
Unit
V
1
μA
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1
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