SSF6670
DESCRIPTION
The SSF6670 uses advanced trench
technology to provide excellent R
DS(ON)
and low gate charge .
Schematic diagram
GENERAL FEATURES
●
V
DS
= 60V,I
D
=3.5A
R
DS(ON)
<120mΩ @ V
GS
=4.5V
R
DS(ON)
<90mΩ @ V
GS
=10V
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Marking and pin Assignment
Application
●PWM
applications
●Load
switch
●Power
management
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
SSF6670
Device
SSF6670
Device Package
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500
units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Limit
60
±25
3.5
2.8
20
2.0
-55 To 150
Unit
V
V
A
A
A
W
℃
V
DS
V
GS
I
D
(25
℃
)
I
D
(70
℃
)
I
DM
P
D
T
J
,T
STG
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
62.5
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V I
D
=250μA
Min
60
Typ
Max
Unit
V
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1
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