SSF6014
ID=30A
—
45
—
Qg Total gate charge
VDD=30V
VGS=10V
nC
4
—
—
—
—
—
—
—
—
—
Qgs Gate-to-Source charge
Qgd Gate-to-Drain("Miller") charge
td(on) Turn-on delay time
—
—
—
—
—
—
—
—
—
15
14.6
14.2
40
VDD=30V
ID=2A ,RL=15Ω
RG=2.5Ω
tr
td(off) Turn-Off delay time
tf Fall time
Rise time
nS
pF
VGS=10V
7.3
VGS=0V
Ciss Input capacitance
1480
190
135
VDS=25V
f=1.0MHZ
Coss Output capacitance
Crss Reverse transfer capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Test Conditions
MOSFET symbol
showing the
.
.
IS
—
—
—
60
A
integral reverse
p-n junction diode.
Pulsed Source Current
ISM
—
240
(Body Diode)
①
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-on Time
—
－
－
—
33
61
1.3
—
V
TJ=25ْC,IS=40A,VGS=0V ③
TJ=25Cْ ,IF=60A
nS
nC
di/dt=100A/μs ③
—
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, VDD = 30V,Id=37A
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
EAS test circuit:
Gate charge test circuit:
dss
BV
©Silikron Semiconductor CO.,LTD.
2009.12.15
Version : 1.0
page
2of5
SILIKRON [ SILIKRON SEMICONDUCTOR CO.,LTD. ]
