SSF5NS70G/D/F
Thermal Resistance
Symbol
Characterizes
Typ.
—
Max.
2.5
4
Units
For TO-251/TO-252 package
For TO-220F package
RθJC
Junction-to-case ③
℃/W
—
For TO-251/TO-252 package
For TO-220F package
—
75
Junction-to-ambient
RθJA
℃/W
(t ≤ 10s) ④
—
80
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol Parameter
Min.
700
—
—
2
Typ.
—
Max.
—
Units
Conditions
V(BR)DSS Drain-to-Source breakdown voltage
V
VGS = 0V, ID = 250μA
VGS=10V,ID = 1A
TJ = 125°C
1.23
2.9
—
1.4
—
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source on-resistance
Gate threshold voltage
Ω
4
VDS = VGS, ID = 250μA
TJ = 125°C
V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.8
—
—
1
VDS = 700V,VGS = 0V
TJ = 125°C
Drain-to-Source leakage current
Gate-to-Source forward leakage
μA
nA
—
50
100
-100
—
—
VGS =30V
IGSS
—
VGS = -30V
Qg
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
8.3
2.3
2.6
10.1
18.4
16.8
14.8
272
168
3.14
ID = 4A,
Qgs
Qgd
td(on)
tr
—
nC
ns
VDS=100V,
VGS = 10V
—
—
—
VGS=10V, VDS =380V,
RGEN=18Ω,ID =4.5A
td(off)
tf
Turn-Off delay time
Fall time
—
—
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
—
VGS = 0V
VDS = 25V
ƒ = 1MHz
—
pF
—
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
MOSFET symbol
showing the
IS
—
—
5 ①
A
integral reverse
p-n junction diode.
IS=2.8A, VGS=0V
TJ = 25°C, IF = IS,
di/dt = 100A/μs
Pulsed Source Current
(Body Diode)
ISM
—
—
15
A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
0.84
284
1.2
—
V
nS
nC
Qrr
1395
—
©Silikron Semiconductor CO.,LTD.
2012.11.16
www.silikron.com
Version : 1.3
page 2 of 10
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