SSF4606
DESCRIPTION
The SSF4606 uses advanced trench
technology MOSFET to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFET may be used
in power inverters, and other applications.
N-channel
P-channel
GENERAL FEATURES
●N-Channel
V
DS
= 30V,I
D
= 6.9A
R
DS(ON)
< 42mΩ @ V
GS
=4.5V
R
DS(ON)
< 28mΩ @ V
GS
=10V
●P-Channel
V
DS
= -30V,I
D
= -6A
R
DS(ON)
< 58mΩ @ V
GS
=-4.5V
R
DS(ON)
< 35mΩ @ V
GS
=-10V
●High
Power and current handing capability
●Lead
free product is acquired
●Surface
Mount Package
Schematic diagram
Marking and pin Assignment
SOP-8
top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
4606
SSF4606
SOP-8
Ø330mm
Tape width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Maximum Power Dissipation
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
N-Channel
30
±20
6.9
6.0
30
2.0
1.44
-55 To 150
P-Channel
-30
±20
-6
-5.0
-30
2.0
1.44
-55 To 150
Unit
V
V
A
A
W
℃
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note2)
R
θJA
N-Ch
P-Ch
62.5
62.5
℃
/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Min
Typ
Max
Unit
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