SSF3620
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
V
SD
V
GS
=0V,I
S
=3A
0.7
1.2
V
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
T
rr
Q
rr
I
F
=7A, dI/dt=100A/µs
V
DS
=15V,I
D
=7A,V
GS
=10V
V
DS
=15V,V
GS
=10V,R
GEN
=6Ω
I
D
=1A
4
12
22
4
12
1.2
3.8
13
7
nS
nS
nS
nS
nC
nC
nC
nS
nC
C
lss
C
oss
C
rss
V
DS
=15V,V
GS
=0V,
F=1.0MHz
600
75
45
PF
PF
PF
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250μA
V
GS
=4.5V, I
D
=3.5A
V
GS
=10V, I
D
=7A
V
DS
=5V,I
D
=11A
1
1.5
21
15.5
10
2
30
22
V
mΩ
mΩ
S
I
GSS
V
GS
=±20V,V
DS
=0V
±100
nA
NOTES:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on 1in
2
FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production testing.
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2
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